MANUFACTURE OF SINGLE CRYSTAL WAFER

PURPOSE:To provide a method of manufacturing single crystal wafers, wherein the wafers can be lessened in cracking in device forming processes. CONSTITUTION:A process 101 wherein a single crystal ball is sliced into pieces, a process 102 wherein both sides of a sliced wafer are lapped, a process 103...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	OKADO SHIGEO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CHEMISTRY CRYSTAL GROWTH DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING METALLURGY PERFORMING OPERATIONS POLISHING PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL RESONATORS SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To provide a method of manufacturing single crystal wafers, wherein the wafers can be lessened in cracking in device forming processes. CONSTITUTION:A process 101 wherein a single crystal ball is sliced into pieces, a process 102 wherein both sides of a sliced wafer are lapped, a process 103 wherein the rear of a lapped wafer is roughened, a process 104 wherein the periphery of a wafer is chamfered after the process 103, and a process 105 wherein the other surface of a lapped wafer is polished into a mirror surface are provided.