SPIN SCRUBBER

PURPOSE:To prevent electrostatic breakdown of insulation film by jetting atmosphere of positively charged ions to a sample, e.g. a semiconductor substrate, when ultrapure water is jetted thereto while being oscillated ultrasonically thereby removing static electricity at the time of cleaning without...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: HIZUME KOJI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HIZUME KOJI
description PURPOSE:To prevent electrostatic breakdown of insulation film by jetting atmosphere of positively charged ions to a sample, e.g. a semiconductor substrate, when ultrapure water is jetted thereto while being oscillated ultrasonically thereby removing static electricity at the time of cleaning without sacrifice of cleaning effect. CONSTITUTION:Ultrapure water 6 is jetted, while being oscillated by an (ultrasonic) oscillation plate 3, toward a semiconductor wafer 2 thus removing dust particles from the surface thereof. At the time of cleaning the wafer 2, air 7 is jetted simultaneously from an ionized air supply means 10 provided independently from an ultrapure water supply mans 8. Since negative static electricity is normally generated at the time of cleaning, the ionized air is charged positively. This constitution removes static electricity at the time of cleaning thus preventing electrostatic breakdown.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH0766163A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH0766163A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH0766163A3</originalsourceid><addsrcrecordid>eNrjZOANDvD0Uwh2Dgp1cnIN4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BHgbmZmaGZsaOxkQoAQB8gByA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SPIN SCRUBBER</title><source>esp@cenet</source><creator>HIZUME KOJI</creator><creatorcontrib>HIZUME KOJI</creatorcontrib><description>PURPOSE:To prevent electrostatic breakdown of insulation film by jetting atmosphere of positively charged ions to a sample, e.g. a semiconductor substrate, when ultrapure water is jetted thereto while being oscillated ultrasonically thereby removing static electricity at the time of cleaning without sacrifice of cleaning effect. CONSTITUTION:Ultrapure water 6 is jetted, while being oscillated by an (ultrasonic) oscillation plate 3, toward a semiconductor wafer 2 thus removing dust particles from the surface thereof. At the time of cleaning the wafer 2, air 7 is jetted simultaneously from an ionized air supply means 10 provided independently from an ultrapure water supply mans 8. Since negative static electricity is normally generated at the time of cleaning, the ionized air is charged positively. This constitution removes static electricity at the time of cleaning thus preventing electrostatic breakdown.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19950310&amp;DB=EPODOC&amp;CC=JP&amp;NR=H0766163A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19950310&amp;DB=EPODOC&amp;CC=JP&amp;NR=H0766163A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HIZUME KOJI</creatorcontrib><title>SPIN SCRUBBER</title><description>PURPOSE:To prevent electrostatic breakdown of insulation film by jetting atmosphere of positively charged ions to a sample, e.g. a semiconductor substrate, when ultrapure water is jetted thereto while being oscillated ultrasonically thereby removing static electricity at the time of cleaning without sacrifice of cleaning effect. CONSTITUTION:Ultrapure water 6 is jetted, while being oscillated by an (ultrasonic) oscillation plate 3, toward a semiconductor wafer 2 thus removing dust particles from the surface thereof. At the time of cleaning the wafer 2, air 7 is jetted simultaneously from an ionized air supply means 10 provided independently from an ultrapure water supply mans 8. Since negative static electricity is normally generated at the time of cleaning, the ionized air is charged positively. This constitution removes static electricity at the time of cleaning thus preventing electrostatic breakdown.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOANDvD0Uwh2Dgp1cnIN4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BHgbmZmaGZsaOxkQoAQB8gByA</recordid><startdate>19950310</startdate><enddate>19950310</enddate><creator>HIZUME KOJI</creator><scope>EVB</scope></search><sort><creationdate>19950310</creationdate><title>SPIN SCRUBBER</title><author>HIZUME KOJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0766163A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1995</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HIZUME KOJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HIZUME KOJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SPIN SCRUBBER</title><date>1995-03-10</date><risdate>1995</risdate><abstract>PURPOSE:To prevent electrostatic breakdown of insulation film by jetting atmosphere of positively charged ions to a sample, e.g. a semiconductor substrate, when ultrapure water is jetted thereto while being oscillated ultrasonically thereby removing static electricity at the time of cleaning without sacrifice of cleaning effect. CONSTITUTION:Ultrapure water 6 is jetted, while being oscillated by an (ultrasonic) oscillation plate 3, toward a semiconductor wafer 2 thus removing dust particles from the surface thereof. At the time of cleaning the wafer 2, air 7 is jetted simultaneously from an ionized air supply means 10 provided independently from an ultrapure water supply mans 8. Since negative static electricity is normally generated at the time of cleaning, the ionized air is charged positively. This constitution removes static electricity at the time of cleaning thus preventing electrostatic breakdown.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JPH0766163A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SPIN SCRUBBER
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T00%3A46%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HIZUME%20KOJI&rft.date=1995-03-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH0766163A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true