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PURPOSE:To prevent electrostatic breakdown of insulation film by jetting atmosphere of positively charged ions to a sample, e.g. a semiconductor substrate, when ultrapure water is jetted thereto while being oscillated ultrasonically thereby removing static electricity at the time of cleaning without...

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Bibliographische Detailangaben
1. Verfasser: HIZUME KOJI
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To prevent electrostatic breakdown of insulation film by jetting atmosphere of positively charged ions to a sample, e.g. a semiconductor substrate, when ultrapure water is jetted thereto while being oscillated ultrasonically thereby removing static electricity at the time of cleaning without sacrifice of cleaning effect. CONSTITUTION:Ultrapure water 6 is jetted, while being oscillated by an (ultrasonic) oscillation plate 3, toward a semiconductor wafer 2 thus removing dust particles from the surface thereof. At the time of cleaning the wafer 2, air 7 is jetted simultaneously from an ionized air supply means 10 provided independently from an ultrapure water supply mans 8. Since negative static electricity is normally generated at the time of cleaning, the ionized air is charged positively. This constitution removes static electricity at the time of cleaning thus preventing electrostatic breakdown.