PROGRAMMABLE ANTI FUSE ELEMENT, AND MANUFACTURE THEREOF
PURPOSE: To enhance recovery capacity of an antifuse element, even upon occurrence of a fusing error and to enhance the electrical conductivity of two electrodes after fusing. CONSTITUTION: This electrically programmable antifuse element for forming an electrode of two layer structure on a semicondu...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | HAKU TANEYASU KIYOU SOUGEN |
| description | PURPOSE: To enhance recovery capacity of an antifuse element, even upon occurrence of a fusing error and to enhance the electrical conductivity of two electrodes after fusing. CONSTITUTION: This electrically programmable antifuse element for forming an electrode of two layer structure on a semiconductor substrate 1 formed with a functional element through an interlayer film comprises a field oxide 2 deposited on the semiconductor substrate 1, a first electrode 3 formed thereon in a specified pattern, a first insulator 4 deposited on the field oxide 2, while covering the first electrode 3 at the opposite ends thereof, a second insulator 5 deposited as an interlayer insulator on the exposed surface of the first electrode 3 between the first insulators 4, and a second electrode 6 formed on the second insulator 5. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH0758209A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH0758209A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH0758209A3</originalsourceid><addsrcrecordid>eNrjZDAPCPJ3D3L09XV08nFVcPQL8VRwCw12VXD1cfV19QvRAQq5KPg6-oW6OTqHhAa5KoR4uAa5-rvxMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAPA3NTCyMDS0djIpQAAOSkJ-U</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PROGRAMMABLE ANTI FUSE ELEMENT, AND MANUFACTURE THEREOF</title><source>esp@cenet</source><creator>HAKU TANEYASU ; KIYOU SOUGEN</creator><creatorcontrib>HAKU TANEYASU ; KIYOU SOUGEN</creatorcontrib><description>PURPOSE: To enhance recovery capacity of an antifuse element, even upon occurrence of a fusing error and to enhance the electrical conductivity of two electrodes after fusing. CONSTITUTION: This electrically programmable antifuse element for forming an electrode of two layer structure on a semiconductor substrate 1 formed with a functional element through an interlayer film comprises a field oxide 2 deposited on the semiconductor substrate 1, a first electrode 3 formed thereon in a specified pattern, a first insulator 4 deposited on the field oxide 2, while covering the first electrode 3 at the opposite ends thereof, a second insulator 5 deposited as an interlayer insulator on the exposed surface of the first electrode 3 between the first insulators 4, and a second electrode 6 formed on the second insulator 5.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950303&DB=EPODOC&CC=JP&NR=H0758209A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950303&DB=EPODOC&CC=JP&NR=H0758209A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAKU TANEYASU</creatorcontrib><creatorcontrib>KIYOU SOUGEN</creatorcontrib><title>PROGRAMMABLE ANTI FUSE ELEMENT, AND MANUFACTURE THEREOF</title><description>PURPOSE: To enhance recovery capacity of an antifuse element, even upon occurrence of a fusing error and to enhance the electrical conductivity of two electrodes after fusing. CONSTITUTION: This electrically programmable antifuse element for forming an electrode of two layer structure on a semiconductor substrate 1 formed with a functional element through an interlayer film comprises a field oxide 2 deposited on the semiconductor substrate 1, a first electrode 3 formed thereon in a specified pattern, a first insulator 4 deposited on the field oxide 2, while covering the first electrode 3 at the opposite ends thereof, a second insulator 5 deposited as an interlayer insulator on the exposed surface of the first electrode 3 between the first insulators 4, and a second electrode 6 formed on the second insulator 5.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAPCPJ3D3L09XV08nFVcPQL8VRwCw12VXD1cfV19QvRAQq5KPg6-oW6OTqHhAa5KoR4uAa5-rvxMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAPA3NTCyMDS0djIpQAAOSkJ-U</recordid><startdate>19950303</startdate><enddate>19950303</enddate><creator>HAKU TANEYASU</creator><creator>KIYOU SOUGEN</creator><scope>EVB</scope></search><sort><creationdate>19950303</creationdate><title>PROGRAMMABLE ANTI FUSE ELEMENT, AND MANUFACTURE THEREOF</title><author>HAKU TANEYASU ; KIYOU SOUGEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0758209A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1995</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HAKU TANEYASU</creatorcontrib><creatorcontrib>KIYOU SOUGEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HAKU TANEYASU</au><au>KIYOU SOUGEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROGRAMMABLE ANTI FUSE ELEMENT, AND MANUFACTURE THEREOF</title><date>1995-03-03</date><risdate>1995</risdate><abstract>PURPOSE: To enhance recovery capacity of an antifuse element, even upon occurrence of a fusing error and to enhance the electrical conductivity of two electrodes after fusing. CONSTITUTION: This electrically programmable antifuse element for forming an electrode of two layer structure on a semiconductor substrate 1 formed with a functional element through an interlayer film comprises a field oxide 2 deposited on the semiconductor substrate 1, a first electrode 3 formed thereon in a specified pattern, a first insulator 4 deposited on the field oxide 2, while covering the first electrode 3 at the opposite ends thereof, a second insulator 5 deposited as an interlayer insulator on the exposed surface of the first electrode 3 between the first insulators 4, and a second electrode 6 formed on the second insulator 5.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JPH0758209A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | PROGRAMMABLE ANTI FUSE ELEMENT, AND MANUFACTURE THEREOF |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T13%3A21%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HAKU%20TANEYASU&rft.date=1995-03-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH0758209A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |