PROGRAMMABLE ANTI FUSE ELEMENT, AND MANUFACTURE THEREOF

PURPOSE: To enhance recovery capacity of an antifuse element, even upon occurrence of a fusing error and to enhance the electrical conductivity of two electrodes after fusing. CONSTITUTION: This electrically programmable antifuse element for forming an electrode of two layer structure on a semiconductor substrate 1 formed with a functional element through an interlayer film comprises a field oxide 2 deposited on the semiconductor substrate 1, a first electrode 3 formed thereon in a specified pattern, a first insulator 4 deposited on the field oxide 2, while covering the first electrode 3 at the opposite ends thereof, a second insulator 5 deposited as an interlayer insulator on the exposed surface of the first electrode 3 between the first insulators 4, and a second electrode 6 formed on the second insulator 5.