MICRO-CHIP, FIELD EMISSION ARRAY AND PREPARATION THEREOF

PURPOSE: To provide a microchip and an FEA with a new structure which can be operated at low voltage and provide high output current and provide a method for manufacturing these devices. CONSTITUTION: A first impurity region 35 which is implanted with a first conductivity impurity in a high concentration is formed on a first conductivity semiconductor substrate 31 having a chip part 42 on the top part and a second conductivity impurity region 39 is formed on the first impurity region 35 in the surrounding of the chip part 42. Moreover, a second conductivity shallow conjunction region 47 is formed in the surface part of the chip part 42, an insulating film 43 in which a pin hole to expose the chip part 42 is formed is formed on the second impurity region 39 through an oxide film 41, and a conductive layer 45 having an aperture part conformed to the pin hole of the insulating film 43 is formed on the insulating film 43. By utilizing a tunneling effect, necessary voltage to be applied for emitting electrons is lowered and the chip part is produced by a self-alignment method and the production process is thus simplified.