FORMATION OF THERMALLY OXIDIZED FILM

PURPOSE:To form a stable thermally oxidized film having high quality on the surface of a substrate to be treated with the extremely thin oxidized film by executing stages exclusive of an oxidation treatment stage in a reduced pressure state of a trace oxygen atmosphere and forming the extremely thin...

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Bibliographische Detailangaben
Hauptverfasser:	ASARI SHIN, NAKAMURA KYUZO, TAKAHASHI SEIICHI, MIHASHI TETSUO, OTA YOSHIFUMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To form a stable thermally oxidized film having high quality on the surface of a substrate to be treated with the extremely thin oxidized film by executing stages exclusive of an oxidation treatment stage in a reduced pressure state of a trace oxygen atmosphere and forming the extremely thin oxidized film on the surface of the substrate to be treated. CONSTITUTION:This method for formation of the thermally oxidized film executes the stages exclusive of the oxidation treatment stage by the stage of maintaining the reduced pressure atmosphere introduced with the trace oxygen in the method for forming the thermally oxidized film on the surface of the substrate to be treated by moving the substrate to be treated from a predischarge chamber disposed in connection to a furnace for oxidation treatment of the substrate to be treated into this furnace in the state of maintaining the reduced pressure atmosphere in the furnace and the predischarge chamber and subjecting the substrate to the oxidation treatment in the furnace with the device consisting of the furnace described above and the predischarge chamber described above. As a result, the surface of the substrate is protected with the extremely thin oxidized film and the quality thereof is improved.