MANUFACTURING METHOD AND DEVICE OF THIN FILM TRANSISTOR

PURPOSE:To form a semiconductor layer exhibiting high performances in excel lent evenness in low defective density by a method wherein the semiconductor layer is formed by leading-in a film forming gas by plasma CVD process simulta neously leading-in hydrogen gas in the part near a film forming subs...

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Bibliographische Detailangaben
1. Verfasser:	KASHIRO TAKESHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING GLASS JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PURPOSE:To form a semiconductor layer exhibiting high performances in excel lent evenness in low defective density by a method wherein the semiconductor layer is formed by leading-in a film forming gas by plasma CVD process simulta neously leading-in hydrogen gas in the part near a film forming substrate so as to evenly thicken the hydrogen concentration on the surface of the substrate. CONSTITUTION:A high-frequency power supply 12 and a grounding electrode opposing thereto are arranged in a film forming reaction chamber 11. Next, a film forming leading-in device 14 is arranged on the high-frequency power supply 12 side while a vacuum exhaust device 15 is arranged on the grounding electrode 13 side. Besides, a film forming substrate 16 is fixed to the grounding electrode 13 while a hydrogen gas leading-in device 17 is arranged closely opposite to this film forming substrate 16. Next, the gasses are led into this chamber 11 from the hydrogen gas leading-in device 17 and the film forming gas leading-in device 14 to form a semiconductor layer. During the film forming time, the hydrogen gas concentration on the whole film forming surface is evenly thickened. Through these procedures, the defective density of the semiconductor layer can be lowered while preserving the excellent switching characteristics.