METHOD AND APPARATUS FOR MANUFACTURING SOLAR CELL, METHOD AND CHAMBER FOR DEPOSITING AMORPHOUS SILICON

PURPOSE: To deposit mutually adjacent layers made of mutually different conductivity type amorphous semiconductor materials in separated glow-discharge chambers. CONSTITUTION: A semiconductors are deposited on a substrate in depositing chambers 24, 26, 28, which are mutually isolated to avoid mixing...

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Hauptverfasser:	SUTANFUOODO ROBAATO OBUSHINSUKII, MASATSUGU IZU, BINSENTO DEBITSUDO KIYANERA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE: To deposit mutually adjacent layers made of mutually different conductivity type amorphous semiconductor materials in separated glow-discharge chambers. CONSTITUTION: A semiconductors are deposited on a substrate in depositing chambers 24, 26, 28, which are mutually isolated to avoid mixing the components of individual reactive gas mixtures. To avoid mutual mixing and contamination, the chambers have separations 76, 78 which have narrow slits allowing the substrate to pass through surround the substrate. Thus a cell having an amorphous Si layer with good in electrical characteristics is obtd.