SEMICONDUCTOR LASER AND ITS MANUFACTURE

PURPOSE:To obtain withstand voltage characteristics to an backward bias voltage, by forming a laser resonator part and a diode which hare a common substrate, and connecting a first ohmic electrode and a second ohmic electrode with a third ohmic electrode and a fourth ohmic electrode, respectively, in the case of operation. CONSTITUTION:A laser resonator part 101 and a diode 103 which have a common substrate 10 are constituted. When a semiconductor laser is operated, a first ohmic electrode 26 of the laser resonator part 101 is connected with a third ohmic electrode 38 of the diode 103, and a second ohmic electrode 24 of the laser resonator part 101 is connected with a fourth ohmic electrode 40 of the diode 103. When a bias voltage is applied across the first ohmic electrode 26 and the second ohmic electrode 24, a forward current flows in the laser resonator part 101. When a backward bias voltage is applied, a current flows through the diode 103 only in the forward direction. Thereby electric damage of the laser resonator part 101 can be prevented.