MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To provide a manufacturing method of a semiconductor device which avoids electrostatic breakdown during contact ion implantation. CONSTITUTION:After contact holes 106a, 106b are formed, a titanium film 107 and a titanium nitride film 108 are formed all over, contact ion implantation is carri...

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Bibliographische Detailangaben
1. Verfasser:	SARUWATARI MASARU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To provide a manufacturing method of a semiconductor device which avoids electrostatic breakdown during contact ion implantation. CONSTITUTION:After contact holes 106a, 106b are formed, a titanium film 107 and a titanium nitride film 108 are formed all over, contact ion implantation is carried out using a photoresist film 109a as a mask and an N-type ion implantation region 113 is formed.