INTEGRATED CIRCUIT DEVICE

PURPOSE: To improve the efficiency of a bipolar transistor and increase the operating speed, by reducing the influence of current clouding by maximizing the active periphery of an emitter and minimizing the active periphery of a base. CONSTITUTION: A base 12, a collector 21, and an emitter 10 are arranged, these are collectively operated as a transistor, the active periphery of the emitter 10 becomes maximum, and the active periphery of the base 12 becomes minimum. For example, a cylindrical emitter 10 exists at a specified radius position from the center of base contact 28, and the part of the emitter 10 which comes into contact with the base 12 exists between the concealed circles 18 and 20 in figure. The emitter 10 is a polycrystalline semiconductor (poly) emitter, and a metal emitter contact 26 is in contact with the poly emitter 10. A base contact 28 is poly semiconductor, and a metal base contact 34 is in contact with a poly base contact 28.