METHOD OF FORMING INTERCONNECTION AND SEMICONDUCTOR DEVICE

METHOD OF FORMING INTERCONNECTION AND SEMICONDUCTOR DEVICE

PURPOSE:To form interconnections for a semiconductor device in such a manner that steps do not appear between the insulator and interconnections at the device surface. CONSTITUTION:A part of a conductive layer (tungsten layer) 2 is brought into a high resistance state by modifying it into a tungsten...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NAGASAWA HIDEJI, SHUDO SHOJI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PURPOSE:To form interconnections for a semiconductor device in such a manner that steps do not appear between the insulator and interconnections at the device surface. CONSTITUTION:A part of a conductive layer (tungsten layer) 2 is brought into a high resistance state by modifying it into a tungsten oxide layer 4 by implanting oxygen ions and conducting heat treatment (d) using a resist pattern 3, which is formed on the tungsten conductive layer 2. After a pattern wiring 5, consisting of remaining tungsten layer, has been formed (e), an insulating film 6 is formed on the pattern wiring 5 and the tungsten oxide layer 4 (f).