METHOD FOR CLEANING SILICON WAFER

PURPOSE:To provide a cleaning method to obtain a silicon wafer with high cleanness in which the adhesion of a metal is suppressed, even after the silicon wafer is cleaned by a cleaning liquid containing a sulfuric acid or hydrochloric acid. CONSTITUTION:After a silicon wafer is cleaned by a cleaning...

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Bibliographische Detailangaben
Hauptverfasser:	SARARA KENICHI, TAKASHIMA MASAYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To provide a cleaning method to obtain a silicon wafer with high cleanness in which the adhesion of a metal is suppressed, even after the silicon wafer is cleaned by a cleaning liquid containing a sulfuric acid or hydrochloric acid. CONSTITUTION:After a silicon wafer is cleaned by a cleaning liquid containing a sulfuric acid or hydrochloric acid, for example, a mixture liquid (SPM) of sulfuric acid and hydrogen peroxide or a mixture liquid (HPM) consisting of hydrochloric acid, hydrogen peroxide and an ultra-pure water, it is treated with a water-soluble liquid containing hydrofluoric acid and nitric acid.