SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

PURPOSE:To provide a technique capable of improving the throughput of a semiconductor device. CONSTITUTION:In a semiconductor device having a bipolar transistor element wherein a base electrode lead-out layer and an emitter electrode lead-out layer are composed of polysilicon and a semiconductor resistance element on a semiconductor substrate, the semiconductor resistance element has a double layer structure wherein a diffusion resistance layer 7a is formed on the main surface of the semiconductor substrate, and a polysilicon resistance layer is formed on the diffusion resistance layer 7a. In the semiconductor resistance element of double layer structure, the polysilicon resistance layer is formed simultaneously with the base electrode leading-out layer, and the diffusion resistance layer 7a is formed simultaneously with a base diffusion layer positioned below the base electrode lead-out layer.