ELECTRODE FORMING METHOD

PURPOSE:To provide an electrode forming method which can effectively form an electrode to a ceramic dielectric block with small manhour and in a short time needed for each process. CONSTITUTION:A Cr thin film which has high adherability to a ceramic dielectric block is formed on the entire surface o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WATANABE GENICHI, MIYAUCHI EISAKU, TASHIRO KOJI, YAMAMOTO HIROMI, SUDO JUNICHI, YOSHIDA MASAYUKI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To provide an electrode forming method which can effectively form an electrode to a ceramic dielectric block with small manhour and in a short time needed for each process. CONSTITUTION:A Cr thin film which has high adherability to a ceramic dielectric block is formed on the entire surface of the block by sputtering in a process #5. Then a Cu thin film having high conductivity is formed on the Cr film by sputtering in a process #6. In a process #10, both Cr and Cu films are partly removed by the YAG laser patterning. Thus a desired pattern is obtained. Then a Cu plated film of high conductivity is formed on the Cu film by electroplating in a process #12, and an Ni plated film having high resistance to the solder is formed on the plated Cu film by electroplating in a process #14. Furthermore a solder plated film is formed on the Ni plated film in a process #16.