SENSE CIRCUIT FOR SEMICONDUCTOR MEMORY

PURPOSE:To obtain a sense circuit for a semiconductor memory operated by the power supply voltage of very wide range by providing a circuit outputting the output of the sense-circuits for a normal voltage and outputting selectively the data or the inverted data of the outputs of storage cells. CONSTITUTION:In a normal case that the power supply voltage is sufficiently high, a sense output selection signal 18 goes to 'L' and composite gate 17 as selection circuit selects the output of the inverter 11 in the sense-circuit 13 for the normal voltage. On the other hand, when the power supply voltage is lowered, the signal 18 goes to 'H' and the composite gate 17 selects data or inverted data outputted from the storage cell of the output of an inverter 14. By such a constitution, this circuit is made operable even when the power supply voltage is lowered and the sense-circuit for the semiconductor memory capable of operating with the power supply voltage of very wide range is obtained.