SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PURPOSE:To provide a method of manufacturing a semiconductor device which has a lateral PNPTr which has high hFE and is stable and uniform in Early voltage. CONSTITUTION:A thin insulating film 102 is formed on an N silicon substrate 101, then a resist pattern is formed thereon, and boron ions are im...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	NEMOTO KIYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!