SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PURPOSE:To provide a method of manufacturing a semiconductor device which has a lateral PNPTr which has high hFE and is stable and uniform in Early voltage. CONSTITUTION:A thin insulating film 102 is formed on an N silicon substrate 101, then a resist pattern is formed thereon, and boron ions are implanted for the formation of P diffusion layers 104 and 105. Then, polysilicon is provided and turned into P polysilicon by ion implantation, which is etched into an emitter lead-out P polysilicon 106 which covers a base region and a collector lead-out P polysilicon 107. Then, an insulating film 108 is formed; an etching operation is carried out to form a contact window which makes most of the emitter lead-out P polysilicon 106 exposed; and an electrode 11 is formed in the contact window, and thus a semiconductor device equipped with a lateral PNPTr can be obtained.