SEMICONDUCTOR DEVICE AND PRODUCTION PROCESS THEREOF

PURPOSE:To obtain a production process of a semiconductor device having a fine structure wherein the connection between interconnection layers can be perfectly made even when the insulation layer is thick and the aspect ratio of the contact hole or via-hole is high. CONSTITUTION:Unlike the conventional connection made by forming a metal layer in the contact hole simultaneously with the formation of the interconnection layer, this layer is made after forming of a connecting metal part. A metal layer 8 formed on a semiconductor substrate 1 is etched to form a connecting metal part 8, leaving a connecting parts only, and then an insulation 2 and interconnection layer, i.e., metal layer 6 are formed. The part 4 electrically connect the substrate 1 to the layer 6.