PLASMA TREATER

PURPOSE:To fix semiconductor wafers without fail by stable electrostatic adsorption without unfavorably affecting the semiconductor wafers and devices. CONSTITUTION:Within the title plasma treater, a dielectric 3a is formed on the surface of a lower electrode 3 so as to mount a semiconductor wafer 9...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SUGA HIDEYUKI, NAKAJIYOU KAZUTSUNA, MIYAKE AKIHIRO, KAWAI KAZUHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE:To fix semiconductor wafers without fail by stable electrostatic adsorption without unfavorably affecting the semiconductor wafers and devices. CONSTITUTION:Within the title plasma treater, a dielectric 3a is formed on the surface of a lower electrode 3 so as to mount a semiconductor wafer 9 as a workpiece on this dielectric body 3a, the lower electrode 3 is impressed with a positive voltage using a DC power supply 5 for electrostatic adsorption to make the voltage negative by plasma treatment while electrically insulated from the lower electrode 3 by the dielectric 3a so that the voltage difference from the semiconductor wafer 9 not decreasing the negative voltage may be increased to augment the electrostatic adsorption.