METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR

PURPOSE:To reduce the induction of electric charge at an offset region due to an anode oxide by applying ultraviolet rays to a gate electrode which mainly consists of anode-oxidized Al under anodization atmosphere or performing plasma treatment. CONSTITUTION:A gate electrode 105 which mainly consists of Al is formed on an activated region 103 formed on a substrate 101. Then, the gate electrode 105 is subjected to anode oxidation, thus forming an anode oxide which mainly consists of Al oxide at least on the side surface of the gate electrode 105. Then, ultraviolet rays are applied to the gate electrode 105 in oxidation atmosphere or plasma treatment is performed to manufacture a thin-film transistor, thus oxidizing metal Al remaining in the anode oxide and hence reducing the induction of electric charge at an offset region and improving characteristics and at the same time reducing deterioration in a long-term use.