MASK MATERIAL FOR SUPERCONDUCTIVE THIN FILM

PURPOSE:To form a mask material into a pattern with fine lines and grooves without deteriorating it in superconductive properties by a method wherein a mask material used in an oxide superconductive thin film patterning process is composed of a first and a second organic resist film and a metal film sandwiched in between them. CONSTITUTION:An Y-Ba-Cu oxide thin film 21 is formed on a superconductive thin film wiring board 20. Thereafter, an electron beam lower organic resist film 22 is formed through spin coating and backing, and an Si thin film 23 is formed through a vacuum evaporation method. Furthermore, an electron beam upper organic resist film 24 is formed through spin coating and baking, and thus a mask material of three-layered film composed of Si and organic resist is obtained. The above mask material can be made to serve as an etching mask used for the metal film layer 23 which is lower than an organic resist mask but nearly equal to an oxide thin film in etching rate. Moreover, a mask material of this constitution keeps a high drawing precision by restraining an effect of forward scattering.