DISCHARGE STARTING MECHANISM OF PLASMA PROCESSING DEVICE

PURPOSE:To start the discharge of a microwave simply and securely by installing the output terminal of a high voltage generating device to the outer wall near the discharge member of a discharge tube, and applying an AC high voltage to the outer wall of the discharge tube immediately after the micro...

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Bibliographische Detailangaben
Hauptverfasser:	SUNADA TAKESHI, TAKADA TOSHINARI, FUJIMOTO HIDEKI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
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Beschreibung
Zusammenfassung:	PURPOSE:To start the discharge of a microwave simply and securely by installing the output terminal of a high voltage generating device to the outer wall near the discharge member of a discharge tube, and applying an AC high voltage to the outer wall of the discharge tube immediately after the microwave is applied. CONSTITUTION:A wafer substrate 17 is loaded on a holding board 16 in a vacuum processing chamber 10, and after heating to a specific temperature, the chamber 10 and a discharge tube 20 are vacuum evacuated by a vacuum pump 13. At the same time, the oxygen gas is fed from a gas feeding end 25 into the tube 20. Then, a microwave with the frequency 2.45 GHz is applied from a microwave current source 31, and immediately after that, a voltage with + or -6KV in the earthing standard is applied to the outer wall of the tube 20 through the output terminal of an AC voltage trigger. A plasma of oxygen gas is produced by the discharge in the tube 20, and a gas including high activity of neutral oxygen radicals is led in to the chamber 10. The oxygen gas is reacted with a resist membrane on the substrate 17, and the membrane can be ashing removed.