SOLID-STATE IMAGE PICK-UP DEVICE AND ITS MANUFACTURE

PURPOSE:To reduce the step after anisotropic etching of a gate electrode for transferring electric charge without reducing wiring resistance. CONSTITUTION:In a solid-state image pick-up device where photo detectors are arranged two-dimensionally on a semiconductor substrate l and electric charge which is photoelectrically converted by the photo detector is read by a charge coupled device, a gate electrode 6A of a vertical shift register of an electric charge circuit in a structure where the large part of a channel center part has a thick film and the film thickness at both edges of the channel in a direction which is parallel to a transfer direction is thin is provided. thus flattening the device and at the same time reducing the step of the first-layer gate electrode 6A and hence facilitating the etching of a second-layer sate electrode 8A.