HEAT TREATING DEVICE
PURPOSE:To provide a heat treating device which has minimized temperature changes in the boundary region in a split heater structure. CONSTITUTION:Each of two split heater groups 40 is counterposed in parallel with a wafer W housed inside a reaction tube 20 in between. An upper group of heaters of t...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SASAKI KIYOHIRO |
| description | PURPOSE:To provide a heat treating device which has minimized temperature changes in the boundary region in a split heater structure. CONSTITUTION:Each of two split heater groups 40 is counterposed in parallel with a wafer W housed inside a reaction tube 20 in between. An upper group of heaters of the reaction tube 20 comprise an upper center zone 42a, an upper rear zone 43a in its periphery, an upper left side zone 44a, an upper front zone 45a, and an upper right side zone 46a, while a lower group of heaters comprise a lower center zone 42b, a lower rear zone 43b in its periphery, a lower left side zone 44b, a lower front zone 45b, and a lower right side zone 46b. Each zone arranged in the periphery of the lower center zones 42a and 42b is placed staggered to make each boundary not to face each other. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH07221037A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH07221037A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH07221037A3</originalsourceid><addsrcrecordid>eNrjZBDxcHUMUQgJApKefu4KLq5hns6uPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7Uk3ivAw8DcyMjQwNjc0ZgYNQBtOR6Z</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>HEAT TREATING DEVICE</title><source>esp@cenet</source><creator>SASAKI KIYOHIRO</creator><creatorcontrib>SASAKI KIYOHIRO</creatorcontrib><description>PURPOSE:To provide a heat treating device which has minimized temperature changes in the boundary region in a split heater structure. CONSTITUTION:Each of two split heater groups 40 is counterposed in parallel with a wafer W housed inside a reaction tube 20 in between. An upper group of heaters of the reaction tube 20 comprise an upper center zone 42a, an upper rear zone 43a in its periphery, an upper left side zone 44a, an upper front zone 45a, and an upper right side zone 46a, while a lower group of heaters comprise a lower center zone 42b, a lower rear zone 43b in its periphery, a lower left side zone 44b, a lower front zone 45b, and a lower right side zone 46b. Each zone arranged in the periphery of the lower center zones 42a and 42b is placed staggered to make each boundary not to face each other.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CONTROLLING ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PHYSICS ; REGULATING ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950818&DB=EPODOC&CC=JP&NR=H07221037A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950818&DB=EPODOC&CC=JP&NR=H07221037A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SASAKI KIYOHIRO</creatorcontrib><title>HEAT TREATING DEVICE</title><description>PURPOSE:To provide a heat treating device which has minimized temperature changes in the boundary region in a split heater structure. CONSTITUTION:Each of two split heater groups 40 is counterposed in parallel with a wafer W housed inside a reaction tube 20 in between. An upper group of heaters of the reaction tube 20 comprise an upper center zone 42a, an upper rear zone 43a in its periphery, an upper left side zone 44a, an upper front zone 45a, and an upper right side zone 46a, while a lower group of heaters comprise a lower center zone 42b, a lower rear zone 43b in its periphery, a lower left side zone 44b, a lower front zone 45b, and a lower right side zone 46b. Each zone arranged in the periphery of the lower center zones 42a and 42b is placed staggered to make each boundary not to face each other.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CONTROLLING</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>REGULATING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBDxcHUMUQgJApKefu4KLq5hns6uPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7Uk3ivAw8DcyMjQwNjc0ZgYNQBtOR6Z</recordid><startdate>19950818</startdate><enddate>19950818</enddate><creator>SASAKI KIYOHIRO</creator><scope>EVB</scope></search><sort><creationdate>19950818</creationdate><title>HEAT TREATING DEVICE</title><author>SASAKI KIYOHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH07221037A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1995</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CONTROLLING</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>REGULATING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES</topic><toplevel>online_resources</toplevel><creatorcontrib>SASAKI KIYOHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SASAKI KIYOHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HEAT TREATING DEVICE</title><date>1995-08-18</date><risdate>1995</risdate><abstract>PURPOSE:To provide a heat treating device which has minimized temperature changes in the boundary region in a split heater structure. CONSTITUTION:Each of two split heater groups 40 is counterposed in parallel with a wafer W housed inside a reaction tube 20 in between. An upper group of heaters of the reaction tube 20 comprise an upper center zone 42a, an upper rear zone 43a in its periphery, an upper left side zone 44a, an upper front zone 45a, and an upper right side zone 46a, while a lower group of heaters comprise a lower center zone 42b, a lower rear zone 43b in its periphery, a lower left side zone 44b, a lower front zone 45b, and a lower right side zone 46b. Each zone arranged in the periphery of the lower center zones 42a and 42b is placed staggered to make each boundary not to face each other.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JPH07221037A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONTROLLING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PHYSICS REGULATING SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES |
| title | HEAT TREATING DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T15%3A37%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SASAKI%20KIYOHIRO&rft.date=1995-08-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH07221037A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |