PRODUCTION OF POLYCRYSTALLINE SILICON AND CRUCIBLE THEREFOR

PURPOSE:To provide a process for production of polycrystalline silicon capable of producing a polycrystalline silicon ingot having high quality with high produc tivity at a low cost, and to provide a crucible for production of this polycrystalline silicon. CONSTITUTION:The crucible 10 which has a bottom 10c and an outer peripheral wall 10b enclosing the space above this bottom 10c and has an approximately recessed shape in the section in a perpendicular direction is disposed in a vacuum or inert gas. An inner peripheral wall 10a forming a hole 20 in a perpendicular direction passing approximately passing the center of the crucible 10 is erected to face the outer peripheral wall 10b in the crucible 10. Raw material silicon is melted in the crucible 10 and a cooler is inserted into this hole 20 to solidify the silicon melt 6 from the inner peripheral wall 10b side to the outer peripheral wall 10b side.