NUMERICAL SOLUTION FOR SEMICONDUCTOR DEVICE SIMULATOR

PURPOSE:To shorten the calculation time in a semiconductor device simulation by estimating initial assumed values at a required recombination rate required by extrapolation from a solution obtained in an ohmic contact by an effective recombination rate alteration loop installed outside a non-linear...

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Hauptverfasser: MARUYAMA KISHIKO, MATSUO HITOSHI, TOYABE TATSU
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To shorten the calculation time in a semiconductor device simulation by estimating initial assumed values at a required recombination rate required by extrapolation from a solution obtained in an ohmic contact by an effective recombination rate alteration loop installed outside a non-linear system iterative solution method loop. CONSTITUTION:First, in an estimation method 2, all the parameters but a recombination rate are already set at the time of start and an initial value of the recombination rate is set to such a value that has nearly the same convergence as in the case of an ohmic contact. In a non-linear system iterative solution method loop, a potential and a carrier density are found under the given conditions using input data 3. Now, initial assumed values in the non-linear system iterative solution method are estimated from the behavior of a solution for the recombination rate in a recombination rate alteration loop and convergence in the iterative solution method is increased. Then, the obtained device characteristics are outputted as output data 4.