SPUTTERING TARGET MATERIAL CAPABLE OF FORMING FERROELECTRIC THIN FILM HAVING LITTLE UNEVENNESS OF PB CONTENT

PURPOSE:To obtain a sputtering target material capable of forming a ferroelectric thin film having little local unevenness of the Pb content and to stabilize the characteristics of a formed thin film by specifying the crystal structure of the nucleus of excess PbO contained in a sputtering target ma...

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Bibliographische Detailangaben
Hauptverfasser:	YASUKAWA TAKAMASA, NODA FUMIO, OUCHI YUKIHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a sputtering target material capable of forming a ferroelectric thin film having little local unevenness of the Pb content and to stabilize the characteristics of a formed thin film by specifying the crystal structure of the nucleus of excess PbO contained in a sputtering target material. CONSTITUTION:When a sputtering target material is made of a sintered compact consisting of (Pb,Ti)O3 or [(Pb,Zr/La),Ti]O3 and excess PbO accounting for 5-40wt.% of the total amt., an orthorhombic crystal structure is imparted to the nucleus of the excess PbO. Local unevenness of the PbO content in a formed ferroelectric thin film can be remarkably diminished by using the resulting target material and the characteristics of the thin film are stabilized.