II-VI COMPOUND SEMICONDUCTOR DEVICE

PURPOSE:To improve contact resistance of a P side electrode part, lattice matching and operating voltage in a II-VI compound semiconductor device. CONSTITUTION:A P side electrode part consists of the following; a first P-type semiconductor layer 11 which hardly comes into ohmic contact with a metal electrode, a second P-type semiconductor layer 12 which is formed on the semiconductor layer 11 and can come into ohmic contact with the metal electrode, and a superlattice structure part 13 interposed between the first semiconductor layer 11 and the second semiconductor layer 12. The superlattice structure part 13 is formed of superlattice layers constituted of one or more layers of a first semiconductor thin layer 131 which forms a quantum well at least in a valence band and a second semiconductor thin layer 132 which forms a quantum well in a conduction band.