THIN FILM ELEMENT

PURPOSE:To obtain a thin film element having high inductance and the cut-off freaquency can be set in low frequency region when the thin film element is employed in an electromagnetic wave noise filter. CONSTITUTION:The thin film element 31 comprises a magnetic substrate 32 having at least an insula...

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Bibliographische Detailangaben
Hauptverfasser:	SHIMIZU KENJI, SUDOU NORIHIRO, KAKIHARA YOSHINOBU, BITO MITSUO, WAGA SATOSHI, TAKITA KAZUNARI, SHINOI KIYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS INDUCTANCES MAGNETS RESONATORS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES TRANSFORMERS
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a thin film element having high inductance and the cut-off freaquency can be set in low frequency region when the thin film element is employed in an electromagnetic wave noise filter. CONSTITUTION:The thin film element 31 comprises a magnetic substrate 32 having at least an insulating surface, a planar spiral coil 33 formed on the substrate 32 a first layer insulation film 36 formed except the terminal parts 34, 35 of the coil 33 and the part 32a of the substrate 32 to be connected with the substrate 32, a magnetic material film 37 and a second layer insulation film 38 deposited sequentially on the first layer insulation film 36 except the terminal parts 34, 35, and bump electrodes 39, 39 formed at the terminal parts 34, 35 and connected. When a microcrystal material having composition of Fe78Ta10C12 is employed in the magnetic material film 37, a miniature thin film element having high inductance can be obtained.