LIGHT EMITTING DIODE AND ITS PRODUCTION

PURPOSE:To improve efficiency of a light emitting diode by preparing a first conductive semiconductor substrate having an irregular surface thereon and jointing a second conductive semiconductor layer and a semiconductor layer on the surface. CONSTITUTION:A second conductive type n-type GaAs layer 2 is formed on the surface of a first conductive type n-type GaAs substrate 1, and a silicon oxide layer 8 is accumulated on the surface of the layer 2, then a photo resit film 9 is formed into stripes by coating. Next, the striped films 9a and film 8 are masked and etched anisotropically so as to form striped grooves 10. Further, the films 9 and 8a are removed, and a p-type GaAs layer 3a and n-type GaAs layer having irregular surfaces respectively are PN-junctioned with each other. Thus, the light emitting efficiency can be further improved by making the exposure length of PN joint face 4a longer.