SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PURPOSE: To prevent the infiltration of hydrogen atoms into and to remove stored charges from a circuit device by inserting a shield plate between a protective film and the circuit device, the shield plate serving to prevent the infiltration of hydrogen and a charging phenomenon. CONSTITUTION: A shield plate 13 is formed by evaporating a conductive material on a first interlayer insulating film 8 and patterning the evaporated conductive material, so that an upper portion occupied by a MOS transistor can be covered. A protective film is formed on the upper portion of a second interconnection pattern by a passivation process. During this process, the plate 13 shields infiltration of hydrogen atoms and the like into the MOS transistor. After the manufacturing process of a semiconductor device is finished, charges stored during the passivation process can be removed through the supply of a predetermined potential or connection to a diffusion region 6 or 7.