CYLINDRICAL REFLECTING MASK, EXPOSURE METHOD AND ALIGNER USING THE MASK AS WELL AS SEMICONDUCTOR DEVICE MANUFACTURED BY THEM

PURPOSE:To obtain the aligner which reduces a driving part, whose temperature controllability is enhanced and whose illuminating region is fixed by a method wherein a cylindrical reflecting mask is turned by making use of its axis as a shaft and an object to be exposed is moved to a direction nearly...

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Bibliographische Detailangaben
Hauptverfasser:	HAYASHIDA MASAMI, KATO HIDEO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain the aligner which reduces a driving part, whose temperature controllability is enhanced and whose illuminating region is fixed by a method wherein a cylindrical reflecting mask is turned by making use of its axis as a shaft and an object to be exposed is moved to a direction nearly at right angles to the shaft of the cylindrical reflecting mask. CONSTITUTION:A cylindrical reflecting mask 101 is formed on a cylindrical support body 103, and the cylindrical support body 103 is connected to a rotation driving system. In addition, in order to prevent a temperature from being raised due to the heat of a substrate, constant-temperature cooling water and a gas substance are constituted so as to be capable of being circulated. Then, pattern light 105 which is reflected on the face of the mask on the cylindrical support body 103 is reduced via reflecting mirrors M1, M2, M3 which constitute a reduction-type projection optical system, and it is projected onto the face of a resist film on a silicon wafer 102. In addition, the silicon wafer 102 is moved to a direction perpendicular to the length of a slit by means of a movement mechanism which is interlocked with the rotation of the cylindrical reflecting mask 101.