HEAT TREATMENT DEVICE FOR SEMICONDUCTOR WAFER

HEAT TREATMENT DEVICE FOR SEMICONDUCTOR WAFER

PURPOSE:To enable the dislocation caused in semiconductor wafers by the heat treatment to be reduced as well as the yield to be increased. CONSTITUTION:Within the title heat treatment device wherein plural semiconductor wafers 3 provided on a jig 2 at a specific intervals in the vertical direction o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SAITOU SHIGEAKI, SATO TOMOMI, UCHINO TOSHIYUKI, SHIMIZU HIROBUMI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:To enable the dislocation caused in semiconductor wafers by the heat treatment to be reduced as well as the yield to be increased. CONSTITUTION:Within the title heat treatment device wherein plural semiconductor wafers 3 provided on a jig 2 at a specific intervals in the vertical direction on a cylindrical furnace body 1, the jig 2 holding respective semiconductor wafers 3 sets up a supporting part capable of minimizing the bonding moment to the diameter L of the semiconductor wafers 3 to be LX(0.55 to 0.65).