SEMICONDUCTOR DEVICE

PURPOSE:To prevent contamination on a gate mounting electrode plane composed of Al film or Al alloy film before TAB mounting process. CONSTITUTION:An anodic oxide film 19 using electrochemical method is formed around on a mounting electrode formed of Al film or Al alloy film on the side of a gate wh...

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Bibliographische Detailangaben
1. Verfasser:	MINO YOSHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PURPOSE:To prevent contamination on a gate mounting electrode plane composed of Al film or Al alloy film before TAB mounting process. CONSTITUTION:An anodic oxide film 19 using electrochemical method is formed around on a mounting electrode formed of Al film or Al alloy film on the side of a gate which extends to the outside, and an insulating film 4 is formed on the electrode 3a so as to protect the top of the mounting electrode 3a. Electrical connection between a TAB electrode and a TFT mounting electrode is performed by permitting the connecting particles 15 in an anisotropic film 14 to penetrate the insulation film 4 on the electrode 3a by TAB thermocompression bonding. Mounting electrode parts other than the TAB connecting part are protected by the anodic oxide film 19 and the insulating film 4, and corrosion clue to humid environment is prevented.