MANUFACTURE OF FIELD EMISSION CATHODE

PURPOSE:To improve a yield when a field emission cathode element is manufactured. CONSTITUTION:An (n) or (p) type amorphous silicon layer 122 having a resistivity of 10 OMEGA/cm-10 OMEGA/cm degree is vapor-deposited on the upper surface of a substrate 121 of glass, etc., to irradiate a laser beam to the given region of this layer to perform annealing treatment. An annealed region can by polycrystallized from an amorphous condition to be changed into a cathode region 123 having resistivity near to that of a conductor. When an insulating layer 124 and a gate electrode layer 125 are formed into films on the upper surface of this (n) or (p) type amorphous silicon layer 122, the respective layers of a laminated substrate for manufacturing an FEC can be flattened to eliminate the crack of a gate electrode apt to be generated an FEC manufacturing process.