METHOD FOR FORMING ZNO THIN FILM

PURPOSE:To enhance the C-axis orientation property and to obtain a thin film having a high specific resistance by adding at least one of Cu and Ni to a Zn metal target at a specific rate when a sputtering system utilizing an electron cyclotron resonance ion source is used to generate the ZnO thin film. CONSTITUTION:The sputtering system 1 is provided with a waveguide 2 in which is microwave whose frequency is 2.5GHz is propagated in a direction of the arrow, a propagated ion collides with a target 12 to emit a material of the target toward a substrate 13 while being reacted with oxygen and to be depositted on the substrate 12 thereby producing the thin film on the substrate 12. In this case, a metallic target including, e.g. Zn is used for the target 12 and introduced in a plasma chamber 3 or a film forming chamber 11, in which a ZnO thin film is formed. A borosilicate glass is used for the substrate 12, and a gas including at least Ar is used, a magnetic field is applied by using a coil 8 to set electrons in the cyclotron resonance state, energy of the microwave is absorbed by the electrons, they collide with gas molecules introduced from a waveguide 4a to obtain a high density plasma.