METHOD OF REMOVING RESIDUAL RESIST

PURPOSE:To completely remove residual resist by exfoliating it using an aqueous solution containing manganese peroxide potassium and sodium hydroxide after the resist is removed by aqueous sodium hydroxide solution. CONSTITUTION:Casein resist is exfoliated by soaking it in aqueous sodium hydroxide s...

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Bibliographische Detailangaben
Hauptverfasser:	NISHIDA MAKOTO, ASADA MASAO, SANO KAZUKO, HAMADA YOICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICALMETHODS OTHER THAN ELECTROLYSIS COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To completely remove residual resist by exfoliating it using an aqueous solution containing manganese peroxide potassium and sodium hydroxide after the resist is removed by aqueous sodium hydroxide solution. CONSTITUTION:Casein resist is exfoliated by soaking it in aqueous sodium hydroxide solution where the concentration is 1.0mol/l and the temperature is 90 deg.C for sixty minutes, and then it is washed and dried. The residuum of the resist is removed by soaking this lead frame in the mixed aqueous solution at 55 deg.C where the concentration of the manganese peroxide potassium is 0.2mol/l and the concentration of sodium hydroxide is 0.5mol/l. Upon measurement of the results with a microscope, the residuum of the resist is completely removed.