SOLID-STATE IMAGE PICKUP ELEMENT AND ITS MANUFACTURE

PURPOSE:To suppress the occurrence of smears by making the clearance between a silicon substrate and light shielding film narrower. CONSTITUTION:An n-type area 105 which becomes a photoelectric conversion section and another n-type area 104 which becomes a charge transferring area are provided in the surface area of a first p-type well layer 102 on an n-type silicon substrate 101. Then a first charge transferring electrode 109 is provided on the substrate 101 with a gate insulating film composed of an oxide film 106, nitride film 107, and oxide film 108 in between and a second charge transferring electrode 113 is provided on the electrode 109 with an interlayer insulating film 112 in between. Thus only the gate insulating film can be interposed between the substrate 101 and a light shielding film 116 at the part where the substrate 101 and film 116 face the photoelectric conversion section.