REFLECTION MASK FOR LITHOGRAPHY AND REDUCTION STEPPER

PURPOSE:To clarify the condition to be fulfilled by an absorber with respect to a half-tone reflection mask to be used in lithography using soft X-ray or vacuum UV. CONSTITUTION:When the optical constant of the substance constituting an absorber pattern 3 to be formed on a reflecting film 2 is expre...

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Bibliographische Detailangaben
Hauptverfasser:	WATANABE YUTAKA, HAYASHIDA MASAMI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	PURPOSE:To clarify the condition to be fulfilled by an absorber with respect to a half-tone reflection mask to be used in lithography using soft X-ray or vacuum UV. CONSTITUTION:When the optical constant of the substance constituting an absorber pattern 3 to be formed on a reflecting film 2 is expressed by 1-delta-ik (delta and (k) are a real number, and (i) is an imaginary unit) and the working wavelength by lambda, 0.29