SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PURPOSE:To obtain the semiconductor integrated circuit device provided with a voltage output circuit which can lower the lower limit operating voltage, and also, can prevent a minute vibration by a simple circuit. CONSTITUTION:The device is provided with a first MOSFET Q1 of a first conductive type subjected to diode formation and a second MOSFET Q2 of a first conductive type whose gate is connected in common, and which is formed in larger size against a first MOSFET Q1. Also, this device is provided with a pair of first constant-current source i1 for allowing a constant current to flow to both ends of a first MOSFET Q1, respectively, and a second constant- current source 2 for allowing a constant current corresponding to the size to flow to a source side of a second constant-current source 2. In such a state, by supplying an input voltage to a source of a first MOSFET Q1, an output voltage is obtained from the source of a second MOSFET Q2. By equalizing a size ratio of a first and a second MOSFETs, and a constant-current ratio provided thereon, respectively, an output current corresponding to an input voltage is obtained, and also, power amplification can be executed.