SEMICONDUCTOR DEVICE AND FABRICATION THEREOF

PURPOSE:To develop an electrode structure for retarding electromigration in a novel device where the contact hole is small enough to require a barrier metal and the wiring is so fine as electromigration must be taken into account. CONSTITUTION:In a semiconductor device where an Al film 6 is deposited on a TiN film 5, a Ti film 4 is provided between an Si substrate 1 and the Ti film 5 only in the region of a contact hole 3 opened through a dielectric film 2 on the Si substrate 1. The fabrication method of semiconductor device comprises step for coating the Si substrate 1 with the dielectric film 2 and opening the contact hole 3 therein, step for coating the Si substrate 1 with the Ti film 4 and then patterning such that the Ti film 4 is left only in the region of the contact hole 3, step for coating the contact hole 3 region on the Si substrate 1 sequentially with the TiN film 5 and an Al film 6, and step for patterning the Al film 6 and the Ti film 5 to form an electrode wiring film.