PLASMA FILM DEPOSITION DEVICE

PURPOSE:To form an SiO2 film at a low temperature, which excels in flatness and seldom contains Si-OH or C=O and is strong in adhesion and does not produce any crack by introducing organic silicon source gas and ozone gas from an inlet for reaction gas and so forth. CONSTITUTION:This plasma film deposition device comprises a reaction chamber 13 having a reaction gas inlet 17 and an evacuation outlet 14, a base 21 for a substrate having a heating mechanism for placing a substrate 22 into the reaction chamber 13 and heating it and a high-frequency electrode 15 disposed with the base 21, which are so arranged that organic silicon source gas and ozone gas are introduced from the reaction gas inlet 17. For instance, the substrate 22 is heated at about 300 deg.C, and TEOS gas and O3 gas are introduced from the gas inlet 17 and the reaction chamber 13 is kept in a vacuum of about 4Torr with TEOS gas of 400SCCM and O3 gas of 400SCCM being supplied. And a high-frequency power of 13.56MHz and 2W/cm is supplied to the electrode 15, thereby producing plasma discharge between the electrode 15 and the base 21.