WAFER GRINDING SUCTION BOARD

PURPOSE:To provide a wafer grinding suction board prevented from the generation of micro deformation even at the time of sucking a wafer of large bore so as to enable the high flatness grinding of the wafer. CONSTITUTION:A permeable disk like suction plate 10 with a glass permeation solidified part...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	ONUKI KAZUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOTDIRECTED TO A PARTICULAR RESULT DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g.ARRANGEMENTS FOR COPYING OR CONTROLLING DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINE TOOLS MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OFPARTICULAR DETAILS OR COMPONENTS MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PURPOSE:To provide a wafer grinding suction board prevented from the generation of micro deformation even at the time of sucking a wafer of large bore so as to enable the high flatness grinding of the wafer. CONSTITUTION:A permeable disk like suction plate 10 with a glass permeation solidified part 10a previously formed at the fixed width of the outer peripheral part is rigidly bonded being fitted into the circular recessed part 3 of an impermeable integrated housing 2 with plural ring grooves 5, 6, 7 and communicating grooves 8 formed in the circular recessed part 3 at the center part. The housing 2 is then removably bound onto an impermeable rotor plate 11 made of the same material as the housing 2. As a result, the mating face of a suction board 1 is only the mating face A between the housing 2 and the rotor plate 11 and moreover of the same material, so that defective bonding caused by thermal expansion difference between both of them is not generated, and the surface of a wafer W is ground uniformly to maintain high flatness.