MANUFACTURE OF SURFACE EMITTING LASER ON SILICON SUBSTRATE

PURPOSE:To provide a method of manufacturing a high-quality surface-emitting laser on a silicon substrate free from cracking. CONSTITUTION:In a surface emitting laser of a structure, wherein an optical resonator is constituted of first and second light reflection layers 7 and 14 by laminating a buff...

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Bibliographische Detailangaben
Hauptverfasser: SUGO MITSURU, OKAMOTO MINORU, KOHAMA TAKETAKA, OISO YOSHITAKA
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To provide a method of manufacturing a high-quality surface-emitting laser on a silicon substrate free from cracking. CONSTITUTION:In a surface emitting laser of a structure, wherein an optical resonator is constituted of first and second light reflection layers 7 and 14 by laminating a buffer layer 2 consisting of a semiconductor, the first light reflection layer 7 consisting of a semiconductor, a cavity layer comprising an active layer and the second light reflection layer 14 consisting of a semiconductor or a dielectric material in the order of the layers 2 and 7, the cavity layer and the layer 14 on the main surface of an Si substrate 1 to make a laser oscillation take place, after the layer 2 or the first semiconductor light reflection layer 7 is formed on the main surface of the Si substrate 1, one part of the layer 2 or the layer 7 is removed, then, the remaining post-laminating process is performed.