FORMATION METHOD OF FLATTENING MATERIAL LAYER UTILIZING CONDENSATION STATE

PURPOSE: To deposit a material layer which is planarized as a whole by cooling a semiconductor wafer to a predetermined temperature, and then feeding near a semiconductor a processing gas, which is condensed at the temperature of the semiconductor wafer and grows to be a liquid phase film covering the wafer. CONSTITUTION: A liquid is mounted to cover a substrate 34 and a surface shape 36 and is then solidified. A layer 38 first covers the surface device 36 and starts filling a gap area, which isolates the adjacent surface shape 36. As the liquid layer is condensed in succession and is then solidified, the material covering the surface shape 36 is reduced. The material filling a valley and a gap between such structures increases. As a result, a surface planarized as a whole such as a surface 44 of a deposited material is provided. The overall process of planarization includes a plurality of steps, including a gas injection step for a predetermined time and a step of exposing a condensed compound on the surface of a wafer 32 to a plasma.