SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING ELEMENT ARRAY, OPTICAL DETECTION DEVICE, OPTICAL INFORMATION PROCESSING DEVICE AND LIGHT-EMITTING DEVICE

PURPOSE:To provide a semiconductor light-emitting element wherein a current- constricting structure is provided as well as a p-side electrode and an n-side electrode are formed in the same direction on the element. CONSTITUTION:A p-type lower-part clad layer 2, an active layer 3, an n-type upper-part clad layer 4, a p-type current-blocking layer 5 and an n-type cap layer 6 are laminated on a p-type substrate 1. An n-type current passage region (an Si-diffused region) 9 having a depth reaching the upper-part clad layer 4 and a p-type current passage region (a Zn-diffused region) 10 having a depth reaching the lower-part clad layer 2 are formed in partial regions of a wafer 14, and a groove 11 for isolation use is dug over the whole width of the wafer so as to separate both regions 19, 9. A p-side electrode 8 is formed on the side of the p-type current passage region 10 at a distance from the groove 11 for isolation use, an n-side electrode 7 is formed on the side of the n-type current passage region 9, and a light-extracting window 12 is opened in the substrate 1 so as to face the n-type current passage region 9.