JPH066520B

JPH066520B

PURPOSE:To economically obtain SiC whiskers having an uniform shape and good quality in high yield, by heating a specific powder composition in a state filled in continuous void parts of an air-permeable structure. CONSTITUTION:A decomposable silicon compound expressed by the formula (n is 1-4; X is...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MYASHITA HIDEAKI, MURAKAWA NORIHIRO, YOSHIKAWA AKIO
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:PURPOSE:To economically obtain SiC whiskers having an uniform shape and good quality in high yield, by heating a specific powder composition in a state filled in continuous void parts of an air-permeable structure. CONSTITUTION:A decomposable silicon compound expressed by the formula (n is 1-4; X is H, halogen, alkyl or alkoxyl), e.g. SiH4, and carbon compound, e.g., benzene, are charged and decomposed in a hot gas containing steam to give a powder composition, containing silicon oxide powder and simple substance carbon powder and having