SEMICONDUCTOR DEVICE
PURPOSE:To suppress leak current flowing through the space between a field oxide film edge and a P well by providing a second P well with a high impurity concentration in contact with the P well at the periphery part crossing the gate electrode of the P well. CONSTITUTION:A P well 3 with a high impu...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | PURPOSE:To suppress leak current flowing through the space between a field oxide film edge and a P well by providing a second P well with a high impurity concentration in contact with the P well at the periphery part crossing the gate electrode of the P well. CONSTITUTION:A P well 3 with a high impurity concentration is provided at the outer-periphery part of a conventional P well 2 and the impurity concentration is made higher than that of the P well 2, thus suppressing formation of the inverted layer of the part, thus suppressing leak current flowing through the space between a field oxide film and a gate oxide and improving the radiation resistance of a semiconductor device. |
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